JPH032337B2 - - Google Patents

Info

Publication number
JPH032337B2
JPH032337B2 JP57029931A JP2993182A JPH032337B2 JP H032337 B2 JPH032337 B2 JP H032337B2 JP 57029931 A JP57029931 A JP 57029931A JP 2993182 A JP2993182 A JP 2993182A JP H032337 B2 JPH032337 B2 JP H032337B2
Authority
JP
Japan
Prior art keywords
wafer
orientation
facet
orientation flat
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57029931A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147118A (ja
Inventor
Masanori Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57029931A priority Critical patent/JPS58147118A/ja
Publication of JPS58147118A publication Critical patent/JPS58147118A/ja
Publication of JPH032337B2 publication Critical patent/JPH032337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57029931A 1982-02-26 1982-02-26 半導体装置の製造方法 Granted JPS58147118A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029931A JPS58147118A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029931A JPS58147118A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58147118A JPS58147118A (ja) 1983-09-01
JPH032337B2 true JPH032337B2 (en]) 1991-01-14

Family

ID=12289730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029931A Granted JPS58147118A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58147118A (en])

Also Published As

Publication number Publication date
JPS58147118A (ja) 1983-09-01

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